Naina Semiconductor Ltd.
MUR20005CT thru MUR20020CTR
Features
Super Fast Recovery Diode, 200A
• Dual Diode Construct...
Naina Semiconductor Ltd.
MUR20005CT thru MUR20020CTR
Features
Super Fast Recovery Diode, 200A
Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR20005CT(R)
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current Non-repetitive forward surge current, half sine-wave
VDC IF(AV)
IFSM
TC ≤ 140 oC TC = 25 oC
50 200
800
MUR20010CT(R) 100
70 100 200
800
MUR20020CT(R) 200
140 200 200
800
Units V
V V A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR20005CT(R)
DC forward voltage
VF
IF = 50 A TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC VR = 50 V
TJ = 125oC
25 1
Maximum Reverse Recovery Time
IF = 0.5A trr IR = 1.0A
IRR = 0.25A
75
MUR20010CT(R) 1.3 25 1
75
MUR20020CT(R) 1.3 25 1
75
Units V µA mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR20005CT(R)
Thermal resistance junction to case
RthJ-C
1.0
Operating, storage temperature range
TJ , Tstg
- 40 to +175
MUR20010CT(R) 1.0
- 40 to +175
MUR20020CT(R) 1.0
- 40 to +175
Units oC/W
oC
1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
MUR20...