Naina Semiconductor Ltd.
MUR30005CT thru MUR30020CTR
Features
Super Fast Recovery Diode, 300A
• Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current Non-repetitive forward surge current, half sine-wave
VDC IF(AV)
IFSM
TC ≤ 140 oC TC = 25 oC
50 300
1500
MUR30010CT(R) 100
70 100 300
1500
MUR30020CT(R) 200
140 200 300
1500
Units V
V V A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
DC forward voltage
VF
IF = 50 A TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC VR = 50 V
TJ = 125oC
25 1
Maximum Reverse Recovery Time
IF = 0.5A trr IR = 1.0A
IRR = 0.25A
90
MUR30010CT(R) 1.3 25 1
90
MUR30020CT(R) 1.3 25 1
90
Units V µA mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR30005CT(R)
Thermal resistance junction to case
RthJ-C
1.0
Operating, storage temperature range
TJ , Tstg
- 40 to +175
MUR30010CT(R) 1.0
- 40 to +175
MUR30020CT(R) 1.0
- 40 to +175
Units oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
MUR30005CT thru MUR30020CTR
ALL DIMENSIONS IN MM
Ordering Table
MUR 1
300 2
05 3
CT 4
1 – Device Type > MUR = Dual Diode Recovery Module
2 – Current Rating = IF(AV)
3 – Voltage = code x 10 = VRRM 4 – Polarity
> CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base)
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
.