MUR30060CTR

Naina Semiconductor Ltd. MUR30040CT thru MUR30060CTR Features Super Fast Recovery Diode, 300A Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC Average forward current IF(AV) Non-repetitive forward surge current, half sinewave IFSM Conditions TC ≤ 140 oC TC = 25 oC MUR30040CT(R) 400 280 400 300 1500 MUR30060CT(R) 600 420 600 300 1500 Units V V V A A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions DC forward voltage VF IF = 50 A TJ = 25 oC DC reverse current VR = 50 V IR TJ = 25 oC VR = 50 V TJ = 125oC Maximum Reverse Recovery Time IF = 0.5A trr IR = 1.0A IRR = 0.25A MUR30040CT(R) 1.5 25 1 110 MUR30060CT(R) 1.7 25 1 150 Units V µA mA nS Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol Thermal resistance junction to case RthJ-C Operating, storage temperature range TJ , Tstg MUR30040CT(R) MUR30060CT(R) Units 1.0 1.0 oC/W - 40 to +175 - 40 to +175 oC 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com Naina Semiconductor Ltd. Package Outline MUR30040CT thru MUR30060CTR ALL DIMENSIONS IN MM Ordering Table MUR 1 300 2 40 3 CT 4 ...