FZT2907A

SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 4 – JUNE 1996 FEATURES * 60 Volt VCEO * Fast switching PARTMARKING DETAIL – 7 FZT2907 FZT2907A C FZT2907 – FZT2907 FZT2907A – FZT2907A B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg -40 -5 -600 1.5 -55 to +150 FMMT2907 FMMT2907A -60 -60 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO FZT2907 MIN. -40 -60 -5 -50 -20 -20 -50 -0.4 -1.6 -1.3 -2.6 35 50 75 100 30 200 75 100 100 100 50 200 FZT2907A MAX. V V V -50 -10 -10 -50 -0.4 -1.6 -1.3 -2.6 nA nA nA V V V V IC=-10µA, IE=0 IC=-10mA, IB=0* IE=-10µA, IC=0 VCE=-30V, VBE=-0.5V VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150°C VCE=-30V, VBE=-0.5V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* MHz IC=-50mA, VCE=-20V f=100MHz -60 -60 -5 UNIT CONDITIONS. MAX. MIN. µA Base Cut-Off Current IB VCE(sat...