TPW4R50ANH

MOSFETs Silicon N-channel MOS (U-MOS-H) TPW4R50ANH 1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPW4R50ANH DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-09 2019-10-21 Rev.4.0 TPW4R50ANH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 100 V VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) ID (Bottom drain) 92 A Drain current (pulsed) (t = 100 µs) (Note 1) IDP 400 A Power dissipation (Tc = 25 ) (Bottom drain) PD 142 W Power dissipation Power dissipation (Note 3) PD (Note 4) PD 2.5 W 0.8 W Single-pulse avalanche energy (Note 5) EAS 125 mJ Single-pulse avalanche current Channel temperature (Note 5) IAS Tch 92 A 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability ...