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TPN1110ENH Dataheets PDF



Part Number TPN1110ENH
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-channel MOSFET
Datasheet TPN1110ENH DatasheetTPN1110ENH Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1110ENH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN1110ENH TSON Advance 1, 2, 3: Source 4: Gate 5, 6.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1110ENH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN1110ENH TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-10-22 Rev.1.0 TPN1110ENH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 13 A Drain current (DC) (Continuous) (Note 1) ID 7.2 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 25 Power dissipation (Tc = 25 ) PD 39 W Power dissipation (t = 10 s) (Note 3) PD 1.9 Power dissipation (t = 10 s) (Note 4) PD 0.7 Single-pulse avalanche energy (Note 5) EAS 33 mJ Avalanche current IAR 7.2 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (Note 3) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 60 V, Tch = 25  (initial), L = 1.0 mH, IAR = 7.2 A Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max Unit 3.20 /W 65.7 178 Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2013-10-22 Rev.1.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) VGS = ±20 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VD.


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