Document
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN1110ENH
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPN1110ENH
TSON Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
1 2013-10-22 Rev.1.0
TPN1110ENH
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 200 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
13 A
Drain current (DC)
(Continuous)
(Note 1)
ID
7.2
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
25
Power dissipation
(Tc = 25 )
PD 39 W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.9
Power dissipation
(t = 10 s)
(Note 4)
PD
0.7
Single-pulse avalanche energy
(Note 5)
EAS
33 mJ
Avalanche current
IAR 7.2 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance
(Tc = 25 ) (t = 10 s)
(Note 3)
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 4)
Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 60 V, Tch = 25 (initial), L = 1.0 mH, IAR = 7.2 A
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max Unit
3.20 /W 65.7 178
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-10-22 Rev.1.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage
Gate threshold voltage Drain-source on-resistance
Symbol
Test Condition
IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON)
VGS = ±20 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VD.