MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH1R403NL
1. Applications
• High-Efficiency DC-DC Converters • Switching Volta...
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH1R403NL
1. Applications
High-Efficiency DC-DC Converters Switching Voltage
Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TPH1R403NL
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS 30 V
VGSS
±20
Drain current (DC) Drain current (DC) Drain current (pulsed)
(Silicon limit) (Tc = 25 ) (t = 1 ms)
(Note 1), (Note 2) (Note 1) (Note 1)
ID ID IDP
150 A 60 200
Power dissipation Power dissipation Power dissipation
(Tc = 25 ) (t = 10 s) (t = 10 s)
(Note 3) (Note 4)
PD PD PD
64 W 2.8 1.6
Single-pulse avalanche energy Avalanche current Channel temperature
(Note 5)
EAS IAR Tch
355 mJ 60 A 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t...