TPWR8503NL

MOSFETs Silicon N-channel MOS (U-MOS-H) TPWR8503NL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 16 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPWR8503NL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-09 2019-10-30 Rev.4.0 TPWR8503NL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) (Bottom drain) ID 150 A Drain current (DC) Drain current (pulsed) (Silicon limit) (t = 100 µs) (Note 1), (Note 2) (Note 1) ID IDP 300 A 500 A Power dissipation (Tc = 25 ) (Bottom drain) PD 142 W Power dissipation Power dissipation Single-pulse avalanche energy (Note 3) (Note 4) (Note 5) PD PD EAS 2.5 W 0.8 W 318 mJ Single-pulse avalanche current Channel temperature Storage temperature (Note 5) IAS Tch Tstg 120 150 -55 to 150 A   Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause thi...