TPH1110ENH

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1110ENH 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPH1110ENH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 13 A Drain current (DC) (Continuous) (Note 1) ID 7.2 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 25 Power dissipation (Tc = 25 ) PD 42 W Power dissipation (t = 10 s) (Note 3) PD 2.8 Power dissipation (t = 10 s) (Note 4) PD 1.6 Single-pulse avalanche energy (Note 5) EAS 33 mJ Avalanche current IAR 7.2 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rat...