Document
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH6400ENH
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 4.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TPH6400ENH
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 200 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
21 A
Drain current (DC)
(Continuous)
(Note 1)
ID
13
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
42
Power dissipation
(Tc = 25 )
PD 57 W
Power dissipation
(t = 10 s)
(Note 3)
PD
2.8
Power dissipation
(t = 10 s)
(Note 4)
PD
1.6
Single-pulse avalanche energy
(Note 5)
EAS
56 mJ
Avalanche current
IAR 13 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2013-10-22 Rev.2.0
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance
(Tc = 25 ) (t = 10 s)
(Note 3)
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 4)
Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 60 V, Tch = 25 (initial), L = 510 µH, IAR = 13 A
TPH6400ENH
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max Unit
2.19 /W 44.6 78.1
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-10-22 Rev.2.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage
Gate threshold voltage Drain-source on-resistance
Symbol
Test Condition
IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON)
VGS = ±20 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.3 mA VGS = 10 V, ID = 6.5 A
Min
200 140 2.0
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Ciss Crss Coss rg
tr ton tf toff
Test Condition VDS = 100 V, VGS = 0 V, f = 1 MHz
See Fig. 6.2.1
Min
TPH6400ENH
Typ. Max Unit
±0.1 µA 10 V 4.0 54 64 mΩ
Typ. Max Unit
810 1100 3 50 90 2.8 4.2 5.4
14.6 5.2 19
pF
Ω ns
VDD ≈ 100 V VGS = 0 V/10 V ID = 6.5 A RL = 15.4 Ω RG = 4.7 Ω Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge
Symbol Qg
Test Condition VDD ≈ 100 V, VGS = 10 V, ID = 13 A
Qgs1 Qgd QSW
Min Typ. Max Unit
11.2
nC
3.9 nC 3.0 4.4
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 6)
IDRP
Diode forward voltage
VDSF IDR = 13 A, VGS = 0 V
Note 6: Ensure that the channel temperature does not exceed 150 .
Min Typ. Max Unit
42 A -1.2 V
3 2013-10-22 Rev.2.0
7. Marking
TPH6400ENH
Fig. 7.1 Marking
4 2013-10-22 Rev.2.0
8. Characteristics Curves (Note)
TPH6400ENH
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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TPH6400ENH
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta (Guaranteed Maximum)
Fig. 8.12 PD - Tc (Guaranteed Maximum)
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TPH6400ENH
Fig. 8.13 rth - tw (Guaranteed Maximum)
Fig. 8.14 Safe Operating Area (Guaranteed M.