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TPH6400ENH Dataheets PDF



Part Number TPH6400ENH
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-channel MOSFET
Datasheet TPH6400ENH DatasheetTPH6400ENH Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH6400ENH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 4.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH6400ENH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain .

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH6400ENH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 4.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH6400ENH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 21 A Drain current (DC) (Continuous) (Note 1) ID 13 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 42 Power dissipation (Tc = 25 ) PD 57 W Power dissipation (t = 10 s) (Note 3) PD 2.8 Power dissipation (t = 10 s) (Note 4) PD 1.6 Single-pulse avalanche energy (Note 5) EAS 56 mJ Avalanche current IAR 13 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2013-10-22 Rev.2.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (Note 3) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 60 V, Tch = 25  (initial), L = 510 µH, IAR = 13 A TPH6400ENH Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max Unit 2.19 /W 44.6 78.1 Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2013-10-22 Rev.2.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) VGS = ±20 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.3 mA VGS = 10 V, ID = 6.5 A Min   200 140 2.0  6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss rg tr ton tf toff Test Condition VDS = 100 V, VGS = 0 V, f = 1 MHz  See Fig. 6.2.1 Min         TPH6400ENH Typ. Max Unit  ±0.1 µA  10  V   4.0 54 64 mΩ Typ. Max Unit 810 1100 3 50 90  2.8 4.2 5.4  14.6  5.2  19  pF Ω ns VDD ≈ 100 V VGS = 0 V/10 V ID = 6.5 A RL = 15.4 Ω RG = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Symbol Qg Test Condition VDD ≈ 100 V, VGS = 10 V, ID = 13 A Qgs1 Qgd QSW Min Typ. Max Unit  11.2  nC  3.9  nC  3.0   4.4  6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (pulsed) (Note 6) IDRP  Diode forward voltage VDSF IDR = 13 A, VGS = 0 V Note 6: Ensure that the channel temperature does not exceed 150 . Min Typ. Max Unit   42 A   -1.2 V 3 2013-10-22 Rev.2.0 7. Marking TPH6400ENH Fig. 7.1 Marking 4 2013-10-22 Rev.2.0 8. Characteristics Curves (Note) TPH6400ENH Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2013-10-22 Rev.2.0 TPH6400ENH Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Ta (Guaranteed Maximum) Fig. 8.12 PD - Tc (Guaranteed Maximum) 6 2013-10-22 Rev.2.0 TPH6400ENH Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed M.


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