EYP-DFB-0852-00150-1500-TOC03-00
DISTRIBUTED FEEDBACK LASER
DATA SHEET
EYP-DFB-0852-00150-1500-TOC03-000x
DISTRIBUTED FEEDBACK LASER
GaAs Semiconductor Laser Diode with integrated ...
Description
DATA SHEET
EYP-DFB-0852-00150-1500-TOC03-000x
DISTRIBUTED FEEDBACK LASER
GaAs Semiconductor Laser Diode with integrated grating structure
Revision
100
1.00
13.11.2014
13.11.2014 page 1 from 5
RRWWEE//RRWWLL BAL BAL
DFDBF/BD/BDRBR TPTLP/LT/PTAPA
General Product Information
Product 852 nm DFB Laser with hermetic TO Housing Monitor Diode, Thermoelectric Cooler and Thermistor
Application Spectroscopy Metrology THz Generation Cs Spectroscopy (Variant ...-0005)
Absolute Maximum Ratings
Storage Temperature Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Reverse Voltage Output Power TEC Current TEC Voltage
Symbol Unit
min
typ
max
TS °C -40 TC °C -20 TLD °C 10 IF mA VR V Popt mW ITEC A VTEC V
85 75 50 270 2 160 1.8 3.2
Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the device.
Recommended Operational Conditions
Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Output Power
Symbol Unit
min
typ
max
TC °C -20 TLD °C 15 IF mA Popt mW 30
65 40 250 150
Measurement Conditions / Comments measured by integrated Thermistor
Characteristics at TLD = 25 °C at Begin Of Life
Parameter Center Wavelength Spectral Width (FWHM) Temperature Coefficient of Wavelength Current Coefficient of Wavelength Output Power @ IF =250 mA Slope Efficiency
Symbol lC Dn
dl / dT dl / dI
Popt h
Unit nm MHz nm / K nm / mA mW W/A
min 851
150 0.6
typ 852 2 0.06 0.003
0.8
max 853
1.0
Meas...
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