EYP-DFB-0852-00150-1500-TOC03-00

DATA SHEET EYP-DFB-0852-00150-1500-TOC03-000x DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure Revision 100 1.00 13.11.2014 13.11.2014 page 1 from 5 RRWWEE//RRWWLL BAL BAL DFDBF/BD/BDRBR TPTLP/LT/PTAPA General Product Information Product 852 nm DFB Laser with hermetic TO Housing Monitor Diode, Thermoelectric Cooler and Thermistor Application Spectroscopy Metrology THz Generation Cs Spectroscopy (Variant ...-0005) Absolute Maximum Ratings Storage Temperature Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Reverse Voltage Output Power TEC Current TEC Voltage Symbol Unit min typ max TS °C -40 TC °C -20 TLD °C 10 IF mA VR V Popt mW ITEC A VTEC V 85 75 50 270 2 160 1.8 3.2 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the device. Recommended Operational Conditions Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Output Power Symbol Unit min typ max TC °C -20 TLD °C 15 IF mA Popt mW 30 65 40 250 150 Measurement Conditions / Comments measured by integrated Thermistor Characteristics at TLD = 25 °C at Begin Of Life Parameter Center Wavelength Spectral Width (FWHM) Temperature Coefficient of Wavelength Current Coefficient of Wavelength Output Power @ IF =250 mA Slope Efficiency Symbol lC Dn dl / dT dl / dI Popt h Unit nm MHz nm / K nm / mA mW W/A min 851 150 0.6 typ 852 2 0.06 0.003 0.8 max 853 1.0 Meas...