EYP-DFB-0935-00080-1500-TOC03-00

DATA SHEET EYP-DFB-0935-00080-1500-TOC03-000x DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure General Product Information Product 935 nm DFB Laser with hermetic TO Package Monitor Diode, Thermoelectric Cooler and Thermistor Application Spectroscopy Metrology Revision 90 0.90 07.07.2014 07.07.2014 page 1 from 5 RRWWEE//RRWWLL BAL BAL DFDBF/BD/BDRBR TPTLP/LT/PTAPA Absolute Maximum Ratings Storage Temperature Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Reverse Voltage Output Power TEC Current TEC Voltage Symbol Unit min typ max TS °C -40 TC °C -20 TLD °C 10 IF mA VR V Popt mW ITEC A VTEC V 85 75 45 200 2 90 1.8 3.2 Stress in excess of one of the Absolute Maximum Ratings can cause permanent damage to the device. Recommended Operational Conditions Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Output Power Symbol Unit min typ max TC °C -20 TLD °C 15 IF mA Popt mW 20 65 40 180 80 Measurement Conditions / Comments measured by integrated Thermistor Characteristics at TLD = 25 °C at Begin Of Life Parameter Center Wavelength Spectral Width (FWHM) Temperature Coefficient of Wavelength Current Coefficient of Wavelength Output Power @ IF =180 mA Slope Efficiency Symbol lC Dn dl / dT dl / dI Popt h Unit nm MHz nm / K nm / mA mW W/A min 934 80 0.5 typ 935 2 0.06 0.003 0.7 max 936 1.0 Measurement Conditions / Comments see images on pa...