SLD-650-P5-C-300-04

650nm Laser Diode Chips 650nm Red Laser Diode Chips SLD-650-P5-C-300-04 ■Specifications (1) Size : (2) Device: (3) Structure: 250*300*100μm Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit :μm) SLD-650-P5-C-300-04 UNION OPTRONICS CORP. P-electrode and N-electrode are both gold pad. Channel depth : 0.9 〜 1.0 μm ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output Po Reverse Voltage Vr Operating Temperature Top Storage Temperature Tstg Rating 7 2 -10〜+40 -15〜+85 Unit mW V ℃ ℃ 3156 UNION OPTRONICS CORP. No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan, R.O.C. TEL : 886-3-485-2687 FAX : 886-3-475-4378 E-mail : [email protected] Revise: 2006/03/01 650nm Laser Diode Chips SLD-650-P5-C-300-04 UNION OPTRONICS CORP. ■Electrical and Optical Characteristics(Tc=25℃) Parameter Symbol Condition Min. Typ. Max. Unit Threshold Current Ith - - 13 mA Operating Current Iop Po=5mW - 19 30 mA Operating Voltage Vop - - 2.2 2.8 Volt Slope Efficiency η 3mW-1mW I3mW-I1mW 0.4 0.9 - mW/mA Beam Divergence Parallel θ// Po=5mW 5 7 12 deg. (FWHM) Perpendicular θ⊥ Po=5mW 30 38 42 deg. Lasing Wavelength λ Po=5mW 640 652 665 nm ◎θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value. ◎Measuring Conditions : Pulse width=5μs , Duty cycle=1% ■Typical characteristic curves LOipgthictaPl OowuteprutvPs.oFwoerrwva.sr.dFoCrwurarrdenCturrent 6 10℃ 25℃ 40℃ 50℃ 4 Forward Voltage v...