SLD-1310-P5-C-05

1310nm Laser Diode Chips 1310nm Laser Diode Chips SLD-1310-P5-C-05 SLD-1310-P5-C-05 UNION OPTRONICS CORP. ■Specifications (1) Size : (2) Device: (3) Structure: 300*300*100μm Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit :μm) 300μm 100μm Waveguide P_electrode N_electrode 300μm Bonding pad locate on the right side to the emitting direction. Maxmum Ratings (Tc = 250C) Characteristic Optical Output Power LD Reverse Voltage Operation Temperature Storage Temperature Symbol Po Vr (LD) Top Tstg Rating 7 2 -40 ~ +85 -40 ~ +125 Unit mW V oC oC 3156 UNION OPTRONICS CORP. No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan, R.O.C. TEL : 886-3-485-2687 FAX : 886-3-475-4378 E-mail : [email protected] Revise: 2006/03/01 1310nm Laser Diode Chips SLD-1310-P5-C-05 UNION OPTRONICS CORP. Optical-electrical characteristics (Tc = 250C) Characteristic Symbol Test Condition Threshhold Current Ith Tc = 250C Operating Current Iop Tc =-40 ~ +85oC Operation Voltage Vop Po = 5mW Slope Efficiency SE Po = 1 to 4mW Lasing Wavelength λ Po = 5mW Spectral Width ∆λ Po = 5mW Optical Output Power Po CW, Kink free P-I Kink Ki Po < 5mW Beam Divergence Parallel θ// Po = 5mW (FWHM) Perpendicula θ⊥ Po = 5mW Min. - 0.25 1290 5 - Typ. 10 22 1.3 0.35 1310 3 - 18 38 Max. Unit 15 mA 35 mA 1.5 V - mW/mA 1330 nm 5 nm - mW 20 % - deg. - deg. ■Precautions QUALITY ASSURANCE After any processing of laser chip or laser diode TO-CAN (LD) by t...