C4763

www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter www.jmnic.com 2SC4763 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak IB Base current PC Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 600 5 8 16 4 50 150 -55~150 UNIT V V V A A A W JMnic www.DataSheet4U.com Product Specification Silicon NPN Power Transistors www.jmnic.com 2SC4763 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VEBO Emitter-base breakdown voltage VCEsat Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain Cob Collector output capacitance VF Forward voltage(damper diode) fT Transition frequency Switching times (inductive load) ts Storage time tf Fall time CONDITIONS IE=300mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=6A IE=0.1A...