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FZT704 Dataheets PDF



Part Number FZT704
Manufacturers ETC
Logo ETC
Description SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Datasheet FZT704 DatasheetFZT704 Datasheet (PDF)

Not Recommended for New Design Please Use FZT705 SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604 PART MARKING DETAIL – FZT704 ABSOLUTE MAXIMUM RATINGS. C E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operati.

  FZT704   FZT704



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Not Recommended for New Design Please Use FZT705 SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604 PART MARKING DETAIL – FZT704 ABSOLUTE MAXIMUM RATINGS. C E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range VCBO VCEO VEBO ICM IC PTOT tj:tstg -120 -100 -10 -4 -1.5 2 -55 to +150 V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltages Collector Cut-Off Currents Emitter Cut-Off Current Saturation Voltages V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO VCE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer VBE(sat) VBE(on) hFE Transition Frequency fT -120 -100 -10 3000 3000 3000 2000 160 V V V -0.1 µA -10 µA -10 µA -0.1 µA -1.3 V -2.5 V -1.8 V -1.7 V 30000 MHz IC=-100µA IC=-10mA IE=-100µA VCB=-100V VCB=-100V, Tamb=100°C VCES=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-100mA, VCE=-10V f=20MHz Input Capacitance Cibo 90 pF Output Capacitance Cobo 15 pF Switching Times Ton 0.6 µs Toff 0.8 µs *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical graphs see FZT705 datasheet VEB=-0.5V, f=1MHz VEB=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=0.5mA 3 - 229 Not Recommended for New Design Please Use FZT705 TYPICAL CHARACTERISTICS FZT705 FZT704 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 -55°C +25°C +100°C +175°C IC/IB=1000 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 VCE(sat) v IC h - Gain 16k 14k 12k 10k 8k 6k 4k 2k 0 0.001 +100°C +25°C -55°C VCE=-5V 0.01 0.1 1 I+ - Collector Current (Amps) hFE v IC 10 20 - (Volts) V - (Volts) V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 -55°C +25°C +100°C +175°C IC/IB=1000 0.01 0.1 1 I+ - Collector Current (Amps) VBE(sat) v IC 10 20 Single Pulse Test at Tamb=25 °C 10 V - (Volts) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.001 -55°C +25°C +100°C VCE=-5V 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 VBE(on) v IC Single Pulse Test at Tamb=25 °C 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1 µ100 s 1 0.1 D.C. 1s 100ms 10ms 1.0ms µ100 s 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area FZT704 1 10 100 VCE - Collector Voltage (Volts) 1000 Safe Operating Area FZT705 3 - 231 .


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