D1855

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1855 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20Fa package ·Complement to type 2SB1335 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC PC Tj Tstg Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 80 60 6 4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1855 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 V(BR)EBO Collector-emitter breakdown voltage IE=50µA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=0.5A; VCE=5V COB Collector output capacitance f=1MHz ; VCB=10V MIN TYP. MAX UNIT 60 V 80 V 6V 1.0 V 1.5 V 10 µA 10 µA 60 320 8 MHz 90 pF hFE Class...