FZT953 PERFORMANCE TRANSISTORS Datasheet

FZT953 Datasheet, PDF, Equivalent


Part Number

FZT953

Description

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

Manufacture

Zetex Semiconductors

Total Page 5 Pages
Datasheet
Download FZT953 Datasheet


FZT953
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
* 5 Amps continuous current , up to 15 Amps peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10 Amps
* Ptot = 3 watts
* FZT951 exhibts extremely low equivalent on resistance;
RCE(sat) 55m at 4A
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS - DEVICE TYPE IN FULL
FZT951
FZT953
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT951
FZT953
UNIT
Collector-Base Voltage
VCBO
-100
-140
V
Collector-Emitter Voltage
VCEO
-60 -100
V
Emitter-Base Voltage
VEBO
-6 V
Peak Pulse Current
ICM
-15 -10
A
Continuous Collector Current
IC
-5 A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 279

FZT953
FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -100 -140
V IC=-100A
Collector-Emitter Breakdown
Voltage
V(BR)CER
-100 -140
V IC=-1A, RB1k
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-60
-90
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-6
-8
V IE=-100A
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICER
R 1k
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-50 nA
-1 A
-50 nA
-1 A
-10 nA
-20
-85
-155
-370
-50
-140
-210
-460
mV
mV
mV
mV
-1080 -1240 mV
VCB=-80V
VCB=-80V, Tamb=100°C
VCB=-80V
VCB=-80V, Tamb=100°C
VEB=-6V
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
IC=-5A, IB=-500mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-935 -1070 mV IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE 100 200
100 200 300
75 90
10 25
IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
fT 120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
74 pF
Switching Times
ton
toff
82 ns
350 ns
* Measured under pulsed conditions. Pulse width =300s. duty cycle  2%
Spice parameter data is available upon request for this device
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA
IB2=200mA, VCC=-10V
3 - 280


Features SOT223 PNP SILICON PLANAR HIGH CURRENT ( HIGH PERFORMANCE) TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuou s current , up to 15 Amps peak current * Very low saturation voltages * Excell ent gain characteristics specified up t o 10 Amps * Ptot = 3 watts * FZT951 exh ibts extremely low equivalent on resist ance; RCE(sat) 55m at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT85 3 PARTMARKING DETAILS - DEVICE TYPE IN FULL FZT951 FZT953 C E C B ABSOLUTE M AXIMUM RATINGS. PARAMETER SYMBOL FZT 951 FZT953 UNIT Collector-Base Volta ge VCBO -100 -140 V Collector-Emit ter Voltage VCEO -60 -100 V Emitter -Base Voltage VEBO -6 V Peak Pulse C urrent ICM -15 -10 A Continuous Col lector Current IC -5 A Power Dissipa tion at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which ca n be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 279 FZT951 ELE.
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