FZT957 PERFORMANCE TRANSISTORS Datasheet

FZT957 Datasheet, PDF, Equivalent


Part Number

FZT957

Description

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

Manufacture

Zetex Semiconductors

Total Page 5 Pages
Datasheet
Download FZT957 Datasheet


FZT957
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES - FZT957 - FZT857
FZT958 - N/A
PARTMARKING DETAILS - DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT957
FZT957
FZT958
C
E
C
B
FZT958
UNIT
Collector-Base Voltage
VCBO
-300 -400
V
Collector-Emitter Voltage
VCEO
-300 -400
V
Emitter-Base Voltage
VEBO
-6 V
Peak Pulse Current
ICM -2 -1.5 A
Continuous Collector Current
IC
-1 -0.5 A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289

FZT957
FZT957
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -330 -440
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER -330 -440
V IC=-1µA, RB 1k
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300 -400
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -6
-8
V IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICER
R 1k
IEBO
VCE(sat)
VBE(sat)
-50 nA
-1 µA
-50 nA
-1 µA
-10 nA
-60 -100 mV
-110 -165 mV
-170 -240 mV
-910 -1150 mV
VCB=-300V
VCB=-300V, Tamb=100°C
VCB=-300V
VCB=-300V, Tamb=100°C
VEB=-6V
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-1A, IB=-300mA*
IC=-1A, IB=-300mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-750 -1020 mV IC=-1A, VCE=-10V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE 100 200
100 200 300
90 170
10
IC=-10mA, VCE=-10V*
IC=-0.5A, VCE=-10V*
IC=-1A, VCE=-10V*
IC=-2A, VCE=-10V*
fT 85 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
23 pF
Switching Times
ton
toff
108
2500
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
VCB=-20V, f=1MHz
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
3 - 290


Features SOT223 PNP SILICON PLANAR HIGH CURRENT ( HIGH PERFORMANCE) TRANSISTORS ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuo us current * Up to 2 Amps peak current * Very low saturation voltage * Excelle nt gain characteristics specified up to 1 Amp COMPLEMENTARY TYPES PARTMARKING DETAILS PARAMETER Collector-Base Voltag e Collector-Emitter Voltage Emitter-Bas e Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Tempe rature Range FZT957 - FZT857 FZT958 - N /A DEVICE TYPE IN FULL SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -2 -1 3 -55 t o +150 FZT957 -300 -300 -6 FZT957 FZT9 58 C E C B ABSOLUTE MAXIMUM RATINGS. FZT958 -400 -400 UNIT V V V -1.5 -0.5 A A W °C *The power which can be dissi pated assuming the device is mounted in a typical manner on a P.C.B. with copp er equal to 4 square inch minimum 3 - 289 FZT957 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise state d) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Br.
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