Document
SUP90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0033 at VGS = 10 V 0.0041 at VGS = 4.5 V
ID (A)d 90 90
Qg (Typ.) 87
TO-220AB
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Power Supply
- Secondary Synchronous Rectification • DC/DC Converter
D
GDS
Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 40 ± 20 90d 90d 160 60 180
125b 3.1
- 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.
Document Number: 65902 S10-0632-Rev. A, 22-Mar-10
Symbol RthJA RthJC
Limit 40 1
Unit °C/W
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SUP90N04-3m3P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VDS = 40 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS ≥ 10 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 22 A VGS = 4.5 V, ID = 20 A
Forward Transconductancea
gfs VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec Turn-Off Delay Timec
tr td(off)
VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Timec
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Min. 40 1
50
Typ.
Max.
2.5 ± 250
1 50 250
0.0027 0.0034
169
0.0033 0.0041
Unit
V nA µA A Ω S
5286 705 283 87 131 15.3 12.2 0.5 2.7 5.4.