DatasheetsPDF.com

SUP90N04-3m3P Dataheets PDF



Part Number SUP90N04-3m3P
Manufacturers Vishay
Logo Vishay
Description N-Channel 40V (D-S) MOSFET
Datasheet SUP90N04-3m3P DatasheetSUP90N04-3m3P Datasheet (PDF)

SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0033 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A)d 90 90 Qg (Typ.) 87 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter D GDS Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and.

  SUP90N04-3m3P   SUP90N04-3m3P



Document
SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0033 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A)d 90 90 Qg (Typ.) 87 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter D GDS Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 40 ± 20 90d 90d 160 60 180 125b 3.1 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 Symbol RthJA RthJC Limit 40 1 Unit °C/W www.vishay.com 1 SUP90N04-3m3P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125 °C VDS = 40 V, VGS = 0 V, TJ = 150 °C On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 22 A VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 20 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs VDS = 20 V, VGS = 10 V, ID = 20 A Gate-Drain Chargec Qgd Gate Resistance Rg f = 1 MHz Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec tr td(off) VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Fall Timec tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb Continuous Current IS Pulsed Current ISM Forward Voltagea VSD IF = 10 A, VGS = 0 V Reverse Recovery Time trr Peak Reverse Recovery Current IRM(REC) IF = 10 A, dI/dt = 100 A/µs Reverse Recovery Charge Qrr Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Min. 40 1 50 Typ. Max. 2.5 ± 250 1 50 250 0.0027 0.0034 169 0.0033 0.0041 Unit V nA µA A Ω S 5286 705 283 87 131 15.3 12.2 0.5 2.7 5.4.


SUP90N03-03 SUP90N04-3m3P SUP90N06-05L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)