SUP90N06-05L

New Product SUP90N06-05L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.0049 @ VGS = 10 V 0.0055 @ VGS = 4.5 V TO-220AB ID (A) 90 a FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature APPLICATIONS D Automotive Such As − High-Side Switch − Motor Drives − 12-V Battery D Synchronous Rectification D DRAIN connected to TAB G GD S Top View Ordering Information: SUP90N06-05L—E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 60 "20 Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 125_C L = 0.1 mH TC = 25_C ID IDM IAS EAS PD TJ, Tstg 90a 90a 240 75 280 300b −55 to 175 THERMAL RESISTANCE RATINGS Junction-to-Ambient (Free Air) Junction-to-Case Parameter Notes a. Package limited. b. See SOA curve for voltage derating. Document Number: 73037 S-41504—Rev. A, 09-Aug-04 Symbol RthJA RthJC Limit 62.5 0.5 Unit V A mJ W _C Unit _C/W www.vishay.com 1 SUP90N06-05L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source...