FZTA14

SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL:COMPLEMENTARY TYPE :DEVICE TYPE IN FULL FZTA64 FZTA14 C E C B SOT223 SYMBOL VCES VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 30 30 30 10 1 2 -55 to +150 UNIT V V V V A W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CES ICBO MIN. 30 100 100 1.5 1.6 2.0 2.0 2.2 10K 20K 5K 170 MHz TYP. MAX. UNIT V nA nA V V V V V CONDITIONS. IC=100µ A, VBE=0 VCB=30V, IE=0 VEB=10V, IC=0 IC=100mA, IB=0.1mA* IC=1A, IB=1mA* IC=100mA, VCE=5V* IC=100mA, IB=0.1mA IC=1A, IB=1mA IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=1A, VCE=5V* IC=50mA, VCE=5V* f=20MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(on) VBE(sat) Static Forward Current hFE Transfer Ratio Transition Frequency fT *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT38C datasheet. 3 - 301 ...