MCN7702

Freescale N-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AON7702/ MCN7702 VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 13 @ VGS = 10V 18 @ VGS = 4.5V ID(A) 14 12 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 14 11 50 5.1 Power Dissipation a TA=25°C TA=70°C PD 3.5 2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 35 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AON7702/ MCN7702 Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-Resistance a rDS(on) VGS ...