NTD4854N

NTD4854N Power MOSFET 25 V, 128 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices Applications VCORE Applications DC--DC Converters High/Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) TA = 25°C TA = 85°C VDSS VGS ID 25 ±20 20.8 16.1 V V A Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 2.5 15.7 12.2 1.43 128 99 W A W A Power Dissipation RθJC (Note 1) TC = 25°C PD 93.75 W Pulsed Drain Current tp=10ms TA = 25°C IDM 255 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain--to--Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 26 Apk, L = 1.0 mH, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxPkg TJ, TSTG IS dV/dt EAS TL 45 --55 to +175 78 6 338 260 A °C A V/ns mJ °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommen...