NTD4856N

NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications VCORE Applications DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 25 V VGS ±20 V TA = 25°C ID 16.8 A TA = 85°C 13.0 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.14 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C Power Dissipation State TA = 25°C PD RqJA (Note 2) 13.3 A 10.3 1.33 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC = 85°C 89 A 69 Power Dissipation RqJC (Note 1) TC = 25°C PD 60 W Pulsed Drain Current tp=10ms TA = 25°C IDM 179 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt IDmaxPkg TJ, TSTG IS dV/dt 45 −55 to +175 50 6 A °C A V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 19 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes...