NTD4857N

NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices Applications VCORE Applications DC--DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) VDSS 25 V VGS ±20 V TA = 25°C ID 15 A TA = 85°C 11.7 Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 2.1 W 12 A 9.3 1.31 W 78 A 61 Power Dissipation RθJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 56.6 W 156 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain--to--Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 17 Apk, L = 1.0 mH, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxPkg TJ, TSTG IS dV/dt EAS TL 45 --55 to +175 47 6 144.5 260 A °C A V/ns mJ °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operati...