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2SC4517A. C4517A Datasheet

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2SC4517A. C4517A Datasheet






C4517A 2SC4517A. Datasheet pdf. Equivalent




C4517A 2SC4517A. Datasheet pdf. Equivalent





Part

C4517A

Description

2SC4517A



Feature


www.datSasaheveat4nu.tcIoCm Semiconducto r Silicon NPN Power Transistors Produc t Specification 2SC4517 2SC4517A DESCR IPTION ·With TO-220F package ·High vo ltage switching transistor APPLICATION S ·For switching regulator and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maxi.
Manufacture

SavantIC

Datasheet
Download C4517A Datasheet


SavantIC C4517A

C4517A; mum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base volta ge 2SC4517 2SC4517A Open emitter VCE O VEBO Collector-emitter voltage Emitt er-base voltage Open base Open collect or IC Collector current ICM Collector current-pulse IB Base current PC Colle ctor power dissipation Tj Junction temp erature Tstg Storage temperature TC=25 VALUE 900 1000 5.


SavantIC C4517A

50 7 3 6 1.5 30 150 -55~150 UNIT V V V A A A W www.datSasaheveat4nu.tcIoCm Se miconductor Silicon NPN Power Transisto rs Product Specification 2SC4517 2SC45 17A CHARACTERISTICS Tj=25 unless other wise specified SYMBOL PARAMETER COND ITIONS V(BR)CEO Collector-emitter brea kdown voltage IC=10mA ; IB=0 VCEsat Co llector-emitter saturation voltage IC=1 A; IB=0.2A VBEsat.


SavantIC C4517A

Base-emitter saturation voltage IC=1A ; IB=0.2A ICBO Collector cut-off curre nt VCB=800V; IE=0 IEBO Emitter cut-of f current VEB=7V; IC=0 hFE DC current gain IC=1A ; VCE=4V COB Output capac itance IE=0; VCB=10V;f=1MHz fT Transi tion frequency IE=-0.25A ; VCE=12V Sw itching times ton Turn-on time ts Stor age time tf Fall time IC=1.0A IB1=0.15 A IB2=-0.45A VCC=2.

Part

C4517A

Description

2SC4517A



Feature


www.datSasaheveat4nu.tcIoCm Semiconducto r Silicon NPN Power Transistors Produc t Specification 2SC4517 2SC4517A DESCR IPTION ·With TO-220F package ·High vo ltage switching transistor APPLICATION S ·For switching regulator and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maxi.
Manufacture

SavantIC

Datasheet
Download C4517A Datasheet




 C4517A
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4517 2SC4517A
DESCRIPTION
·With TO-220F package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC4517
2SC4517A
Open emitter
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
Open base
Open collector
IC Collector current
ICM Collector current-pulse
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
900
1000
550
7
3
6
1.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W




 C4517A
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4517 2SC4517A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=1A ; VCE=4V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IE=-0.25A ; VCE=12V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1.0A IB1=0.15A
IB2=-0.45A
VCC=250V ,RL=250B
MIN TYP. MAX UNIT
550 V
0.5 V
1.2 V
100 µA
100 µA
10 30
35 pF
6 MHz
0.7 µs
4.0 µs
0.5 µs
2




 C4517A
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4517 2SC4517A
Fig.2 Outline dimensions
3



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