C4517A

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4517 2SC4517A DESCRIPTION ·With TO-220F package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SC4517 2SC4517A Open emitter VCEO VEBO Collector-emitter voltage Emitter-base voltage Open base Open collector IC Collector current ICM Collector current-pulse IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature TC=25 VALUE 900 1000 550 7 3 6 1.5 30 150 -55~150 UNIT V V V A A A W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4517 2SC4517A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=1A ; VCE=4V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IE=-0.25A ; VCE=12V Switching times ton Turn-on time ts Storage time tf Fall time IC=1.0A IB1=0.15A IB2=-0.45A VCC=250V ,RL=250B MIN TY...