S16S35

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives S16S30 thru S16S60 SCHOTTKY BARRIER RECTIFIERS 16 AMPERES 30-60 VOLTS TO-263 (D2-PAK) MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage S16S Symbol Unit 30 35 40 45 50 60 VRRM VRWM 30 35 40 45 50 60 VR V RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR), TC=100 Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range VR(RMS) 21 IF(AV) IFM IFSM TJ , Tstg 25 28 32 35 8.0 16 16 150 -65 to +150 42 V A A A ELECTRIAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward...