ME25N06

N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. ME25N06(-G) FEATURES ● RDS(ON)≦62mΩ@VGS=10V ● RDS(ON)≦86mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252) Top View e Ordering Information: ME25N06 (Pb-free) ME25N06-G (Green product) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25℃ Current(Tj=150℃) TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case * Symbol VDSS VGSS ID IDM PD TJ RθJC * The device mounted on 1in2 FR4 board with 2 oz copper Rating 60 ±25 16 13 65 25 16 -55 to 150 Steady State 5 Unit V V A A W ℃ ℃/W Dec,2008-Ver1.0 01 ME25N06(-G) N-Channel Enhancement MOSFET Electrical Character...