N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode...
N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-252-3L) Top View
Ordering Information: ME06N10 (Pb-free) ME06N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current
TC=25℃ TC=70℃
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25℃ TC=70℃
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance-Junction to Case*
* The device mounted on 1in2 FR4 board with 2 oz copper
RθJC
Maximum Ratings
100 ±20 7.2 5.7 28.8 16.6 10.6 -55 to 150 7.5
Unit V V
A
A
W
℃ ℃/W
Dec, 2013 Ver1.0
01
ME06N10/ME06...