Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tap...
Description
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
S1 G1 S2 G2
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
PD - 91097E
IRF7105
HEXFET® Power MOSFET
N-CHANNEL MOSFET 18
27
36
45 P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
25V
-25V
D2 RDS(on) 0.10Ω 0.25Ω
ID 3.5A -2.3A
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C
VGS dv/dt TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv...
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