N-Channel 40-V (D-S) MOSFET
N-Channel 40-V (D-S) MOSFET
Si2318DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 40
RDS(on) (Ω) 0.045 at VGS = 10 V 0.0...
Description
N-Channel 40-V (D-S) MOSFET
Si2318DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 40
RDS(on) (Ω) 0.045 at VGS = 10 V 0.058 at VGS = 4.5 V
ID (A) 3.9 3.5
FEATURES Halogen-free According to IEC 61249-2-21
Available TrenchFET® Power MOSFET
APPLICATIONS Stepper Motors Load Switch
TO-236 (SOT-23)
G1 S2
3D
Top View Si2318DS( C8)* *Marking Code
Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free) Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
3.9 3.0 3.1 2.4
Pulsed Drain Currentb
IDM 16
Continuous Source Current (Diode Conduction)a, b
IS 0.8
Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
1.25 0.75 0.8 0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t≤5s Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature
Document Number: 72322 S09-0130-Rev. B, 02-Feb-09
Symbol RthJA RthJF
Typical 75 120 40
Maximum 100 166 50
Unit °C/W
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Si2318DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source ...
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