N-Channel Power MOSFET
SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4A, 600Volts)
DESCRIPTION
The Nell...
Description
SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES
RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
D
G DS TO-251 (I-PAK) (4N60F) D
D
G S
TO-252 (D-PAK) (4N60G)
GDS
TO-220AB (4N60A)
GDS
TO-220F (4N60AF)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
4 600 2.5 @ VGS = 10V 20
D (Drain)
G (Gate)
S (Source)
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SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
ID
IDM IAR EAR EAS dv/dt
Gate to Source voltage
Continous Drain Current
Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3)
TC=25°C TC=100°C...
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