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AOD4N60 Dataheets PDF



Part Number AOD4N60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 4A N-Channel MOSFET
Datasheet AOD4N60 DatasheetAOD4N60 Datasheet (PDF)

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 1.

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AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 700V@150℃ 4A < 2.3Ω TO252 DPAK Top View Bottom View D D Top View TO251A IPAK Bottom View TO251 Top View Bottom View D S G G S S D G G D S S D G AOD4N60 AOI4N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOU4N60 Maximum 600 ±30 4 2.6 14 2.8 118 235 50 5 104 0.83 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 43 1 Maximum 55 0.5 1.2 G SD G S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.3.0: March 2014 www.aosmd.com Page 1 of 6 AOD4N60/AOI4N60/AOU4N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A gFS Forward Transconductance VDS=40V, ID=2A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 600 700 V 0.67 V/ oC 1 µA 10 ±100 nΑ 3.4 4.1 4.5 V 1.8 2.3 Ω 6S 0.76 1 V 4A 14 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 420 528 640 35 53 70 2.5 4.8 7 1.2 2.5 3.8 pF pF pF Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=480V, ID=4A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=300V, ID=4A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 9.5 12 14.5 nC 2.8 3.6 4.5 nC 2.2 4.4 6.6 nC 17 ns 26 ns 34 ns 21 ns 150 190 230 1.9 2.4 3 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: March 2014 www.aosmd.com Page 2 of 6 AOD4N60/AOI4N60/AOU4N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 8 10V 7 6 6.5V 5 4 6V 3 2 VGS=5.5V 1 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics ID(A) 100 VDS=40V 10 125°C 1 -55°C 25°C 0.1 2468 VGS(Volts) Figure 2: Transfer Characteristics 10 RDS(ON) (Ω) 4.5 3 4.0 3.5 VGS=10V 3.0 2.5 2.0 1.5 Normalized On-Resistance 2.5 VGS=10V ID=2A 2 1.5 1 0.5 1.0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current an.


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