Document
AOD4N60/AOI4N60/AOU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
700V@150℃ 4A < 2.3Ω
TO252 DPAK
Top View
Bottom View
D D
Top View
TO251A IPAK Bottom View
TO251
Top View
Bottom View
D
S G
G S
S
D G
G
D S
S D G
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS
dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
AOU4N60
Maximum 600 ±30 4 2.6 14 2.8 118 235 50 5 104 0.83
-50 to 150
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 43 1
Maximum 55 0.5 1.2
G SD G
S
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Rev.3.0: March 2014
www.aosmd.com
Page 1 of 6
AOD4N60/AOI4N60/AOU4N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
BVDSS /∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A
gFS Forward Transconductance
VDS=40V, ID=2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600 700
V
0.67
V/ oC
1 µA
10
±100 nΑ
3.4 4.1 4.5
V
1.8 2.3
Ω
6S
0.76 1
V
4A
14 A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
420 528 640
35 53 70
2.5 4.8
7
1.2 2.5 3.8
pF pF pF Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr tD(off)
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=300V, ID=4A, RG=25Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
9.5 12 14.5 nC
2.8 3.6 4.5 nC
2.2 4.4 6.6 nC
17 ns
26 ns
34 ns
21 ns
150 190 230 1.9 2.4 3
ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: March 2014
www.aosmd.com
Page 2 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
8 10V
7
6 6.5V
5
4 6V
3
2 VGS=5.5V 1
0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics
ID(A)
100 VDS=40V
10 125°C
1
-55°C 25°C
0.1
2468
VGS(Volts) Figure 2: Transfer Characteristics
10
RDS(ON) (Ω)
4.5 3
4.0 3.5
VGS=10V 3.0 2.5 2.0 1.5
Normalized On-Resistance
2.5 VGS=10V ID=2A
2 1.5
1 0.5
1.0
0 2 4 6 8 10 ID (A)
Figure 3: On-Resistance vs. Drain Current an.