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H4N60F Dataheets PDF



Part Number H4N60F
Manufacturers HAOHAI
Logo HAOHAI
Description N-Channel MOSFET
Datasheet H4N60F DatasheetH4N60F Datasheet (PDF)

4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs 5000Pcs ■Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge: 15nC(Typ.)  Extended Safe Operating Area  Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V  100% Avalanche Tested  Package: TO-220AB & TO-220F ID=4A BVDSS=6.

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs 5000Pcs ■Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge: 15nC(Typ.)  Extended Safe Operating Area  Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V  100% Avalanche Tested  Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω ■  、、、、、RoHS ■  、LCD、LED、、UPS、  、、、、、、  、、 ■  TO-220P TO-220AB()  TO-220F TO-220FP() 4N60 Series Pin Assignment 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1G 3S ■ Absolute Maximum Ratings(TC=25℃ unless otherwise specified) Symbol Parameter VDSS ID IDM VGS EAS IAR EAR Drain-Source Voltage Drain Current-Continuous (TC=25℃) Drain Curren-Continuous (TC=100℃) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds   * Drain current limited by maximum junction temperature ( TO-220F ) ■ Thermal Resistance Characteristics Symbol Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient TO-220AB Typ. Max. -- 1.25 0.5 -- -- 62.5 Value TO-220AB TO-220F 600 600 4.0 4.0* 2.5 2.5* 16 16* ±30 ±30 240 240 4.0 4.0 10 10 5.5 5.5 100 33 0.8 0.26 -50 ~ +150 300 TO-220F Typ. Max. -- 3.79 -- --- 62.5 Units V A V mJ A mJ V/ns W W/℃ ℃ Units ℃/W http://www.szhhe.com HAOHAI ELECTRONICS CO., LTD. 1 7 [email protected] H4N60C_PF_BUB 4A, 600V, N ■ Electrical Characteristics(TC=25℃ unless otherwise specified) Symbol Parameter Test Conditions 4N60 Series N-Channel MOSFET Min. Typ. Max. Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=VGS, ID=250μA VGS=10V, ID=2A Off Characteristics BVDSS △BVDSS/△TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS=0V, ID=250μA ID=250μA, Referenced to 25℃ VDS=600V, VGS=0V VDS=480V, TC=125℃ VGS=+30V, VDS=0V VGS=-30V, VDS=0V 2.5 -- 600 ------ -2.0 -0.65 ----- 4.5 2.5 --1 10 100 -100 Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=25V VGS=0V f=1.0MHz -- 600 780 -- 65 85 -- 11 14 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=300V ID=4A, RG=25Ω (Note 4,5) VDS=480V ID=4A, VGS=10V (Note 4,5) -- 15 30 -- 40 80 -- 50 100 -- 40 80 -- 15 20 -- 3.4 --- 6.7 -- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 4.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 16 VSD Source-Drain Diode Forward Voltage IS=4A, VGS=0V -- -- 1.4 trr Reverse Recovery Time IS=4A, VGS=0V -- 300 -- Qrr Reverse Recovery Charge diF/dt=100μA/μs (Note 4) -- 2.2 --   Notes:   1. Repetitive Rating: Pulse width limited by maximum junction temperature ;  2. L=27.5mH, I AS =4A, V DD =50V, R G =25Ω, Starting T J =25 ℃   3. I SD ≤ 4A, di/dt ≤ 200A/μS, V DD ≤ BVDSS, Starting T J =25 ℃; 4. Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2% ; 5. Essentially Independent of Operating Temperature V Ω V V/℃ μA nA pF nS nC A V nS μC http://www.szhhe.com HAOHAI ELECTRONICS CO., LTD. 2 7 [email protected] H4N60C_PF_BUB 4A, 600V, N Typical Performance Characteristics Fig-1. On Region Characteristics 4N60 Series N-Channel MOSFET Fig-2. Transfer Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] Fig-3. On Resistance Variation vs Fi111g-3. Drain Current and Gate Voltage VGS, Gate-Source Voltage [V] Fig-4. Body Diode Forward Voltage Variation Fig-4. with Source Current and Temperature IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance ID, Drain Current [A] Fig-5. Capacitance Characteristics VSD, Source-Drain Voltage [V] Fig-6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] http://www.szhhe.com HAOHAI ELECTRONICS CO., LTD. 3 7 [email protected] H4N60C_PF_BUB 4A, 600V, N Typical Performance Characteristics (Continued) 4N60 Series N-Channel MOSFET Fig-7. Breakdown Voltage Variation vs Temperature Fig-8. On-Resistance Variation vs Temperature RDS(ON), (Normalized) Drain-Source On-Resistan.


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