4A, 600V, N
FQP4N60C FQPF4N60C
H4N60P H4N60F
4N60
H HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
4N60 Series
N-Channel MOSFET
1000Pcs
5000Pcs
■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 15nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested Package: TO-220AB & TO-220F
ID=4A BVDSS=600V RDS(on)=2.0Ω
■ 、、、、、RoHS
■ 、LCD、LED、、UPS、 、、、、、、 、、
■ TO-220P TO-220AB() TO-220F TO-220FP()
4N60 Series Pin Assignment
3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source
2D
Series Symbol:
1G
3S
■ Absolute Maximum Ratings(TC=25℃ unless otherwise specified)
Symbol
Parameter
VDSS
ID
IDM VGS EAS IAR EAR
Drain-Source Voltage Drain Current-Continuous (TC=25℃) Drain Curren-Continuous (TC=100℃)
Drain Current – Pulsed (Note 1) Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature ( TO-220F )
■ Thermal Resistance Characteristics
Symbol
Parameter
RθJC RθCS RθJA
Junction-to-Case Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 1.25
0.5 --
-- 62.5
Value
TO-220AB TO-220F
600 600 4.0 4.0* 2.5 2.5* 16 16* ±30 ±30 240 240 4.0 4.0 10 10 5.5 5.5 100 33 0.8 0.26
-50 ~ +150 300
TO-220F Typ. Max.
-- 3.79 -- --- 62.5
Units V
A
V mJ A mJ V/ns W W/℃ ℃
Units
℃/W
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4A, 600V, N
■ Electrical Characteristics(TC=25℃ unless otherwise specified)
Symbol
Parameter
Test Conditions
4N60 Series
N-Channel MOSFET
Min. Typ. Max. Units
On Characteristics VGS
RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS=VGS, ID=250μA VGS=10V, ID=2A
Off Characteristics BVDSS
△BVDSS/△TJ
IDSS
IGSSF IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS=0V, ID=250μA ID=250μA, Referenced to 25℃
VDS=600V, VGS=0V VDS=480V, TC=125℃ VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
2.5 --
600 ------
-2.0
-0.65
-----
4.5 2.5
--1 10 100 -100
Dynamic Characteristics Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS=25V VGS=0V f=1.0MHz
-- 600 780 -- 65 85 -- 11 14
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=300V ID=4A, RG=25Ω
(Note 4,5)
VDS=480V ID=4A, VGS=10V
(Note 4,5)
-- 15 30 -- 40 80 -- 50 100 -- 40 80 -- 15 20 -- 3.4 --- 6.7 --
Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current
-- -- 4.0
ISM
Pulsed Source-Drain Diode Forward Current
-- -- 16
VSD Source-Drain Diode Forward Voltage
IS=4A, VGS=0V
-- -- 1.4
trr Reverse Recovery Time
IS=4A, VGS=0V
-- 300 --
Qrr
Reverse Recovery Charge
diF/dt=100μA/μs (Note 4)
-- 2.2 --
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature ; 2. L=27.5mH, I AS =4A, V DD =50V, R G =25Ω, Starting T J =25 ℃ 3. I SD ≤ 4A, di/dt ≤ 200A/μS, V DD ≤ BVDSS, Starting T J =25 ℃; 4. Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2% ; 5. Essentially Independent of Operating Temperature
V Ω V V/℃ μA nA
pF
nS
nC
A V nS μC
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4A, 600V, N
Typical Performance Characteristics
Fig-1. On Region Characteristics
4N60 Series
N-Channel MOSFET
Fig-2. Transfer Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig-3. On Resistance Variation vs Fi111g-3. Drain Current and Gate Voltage
VGS, Gate-Source Voltage [V]
Fig-4. Body Diode Forward Voltage Variation Fig-4. with Source Current and Temperature
IDR, Reverse Drain Current [A]
RDS(ON) [Ω], Drain-Source On-Resistance
ID, Drain Current [A] Fig-5. Capacitance Characteristics
VSD, Source-Drain Voltage [V] Fig-6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
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4A, 600V, N
Typical Performance Characteristics (Continued)
4N60 Series
N-Channel MOSFET
Fig-7. Breakdown Voltage Variation vs Temperature
Fig-8. On-Resistance Variation vs Temperature
RDS(ON), (Normalized) Drain-Source On-Resistan.