MTN4N60E3

CYStech Electronics Corp. Spec. No. : C408E3 Issued Date : 2010.12.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4N60E3 BVDSS : 600V RDS(ON) : 2.1Ω(typ.) ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Open Framed Power Supply Adapter STB Symbol MTN4N60E3 Outline TO-220 G：Gate D：Drain S：Source MTN4N60E3 GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408E3 Issued Date : 2010.12.06 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID ID ID...