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USM12J48 Dataheets PDF



Part Number USM12J48
Manufacturers Toshiba
Logo Toshiba
Description BI-DIRECTIONAL TRIODE THYRISTOR
Datasheet USM12J48 DatasheetUSM12J48 Datasheet (PDF)

SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12G48A,USM12G48A,SM12J48A,USM12J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off-State Voltage : VDRM=400, 600V l R.M.S. On-State Current : IT (RMS) =12A l Gate Trigger Current : IGT=30mA Max. : IGT=20mA Max. (“A”Type) SM12G48, SM12J48, SM12G48A, SM12J48A Unit in mm USM12G48, USM12J48, USM12G48A, USM12J48A JEDEC JEITA TOSHIBA MARKING .

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SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12G48A,USM12G48A,SM12J48A,USM12J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off-State Voltage : VDRM=400, 600V l R.M.S. On-State Current : IT (RMS) =12A l Gate Trigger Current : IGT=30mA Max. : IGT=20mA Max. (“A”Type) SM12G48, SM12J48, SM12G48A, SM12J48A Unit in mm USM12G48, USM12J48, USM12G48A, USM12J48A JEDEC JEITA TOSHIBA MARKING ― ― 13-10J1A JEDEC JEITA TOSHIBA ― ― 13-10J2A Weight : 1.7g NUMBER *1 *2 SYMBOL TYPE SM12G48, SM12G48A, USM12G48, USM12G48A SM12J48, SM12J48A, USM12J48, USM12J48A SM12G48A,SM12J48A,USM12G48A,USM12J48A *3 MARK SM12G48 SM12J48 A Example 8A : January 1998 8B : February 1998 8L : December 1998 1 2001-07-13 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage (U)SM12G48 (U)SM12G48A (U)SM12J48 (U)SM12J48A R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I2t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM IT (RMS) ITSM I2t di /dt PGM PG (AV) VGM IGM Tj Tstg RATING 400 600 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 −40~125 −40~125 UNIT V A A A2s A / ms W W V A °C °C Note 1 : VDRM=0.5×Rated ITM≤15A tgw≥10ms tgr≤250ns igp=IGT×2.0 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Repetitive Peak Off-State Current I Gate Trigger Voltage II III IV I SM12G48 SM12J48 II III Gate Trigger Current IV I SM12G48A SM12J48A II III IV Peak On-State Voltage Gate Non-Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off-State Voltage (U)SM12G48 (U)SM12J48 (U)SM12G48A (U)SM12J48A Critical Rate of Rise of Off-State Voltage at Commutation (U)SM12G48 (U)SM12J48 (U)SM12G48A (U)SM12J48A SYMBOL IDRM VGT IGT VTM VGD IH Rth (j-c) dv / dt TEST CONDITION VDRM=Rated T2 (+) , Gate (+) VD=12V RL=20W T2 (+) , Gate (-) T2 (-) , Gate (-) T2 (-) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (-) T2 (-) , Gate (-) VD=12V RL=20W T2 (-) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (-) T2 (-) , Gate (-) T2 (-) , Gate (+) ITM=17A VD=Rated, Tc=125°C VD=12V, ITM=1A Junction to Case, AC VDRM=Rated, Tj=125°C Exponential Rise MIN. ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― ― ― TYP. MAX. UNIT ― 20 mA ― 1.5 ― 1.5 V ― 1.5 ―― ― 30 ― 30 ― 30 ―― mA ― 20 ― 20 ― 20 ―― ― 1.5 V ―― V ― 50 mA ― 2.4 °C / W 300 ― V / ms 200 ― (dv / dt) c VDRM=400V, Tj=125°C (di / dt) c=−6.5A / ms 10 ― ― V / ms 4 ―― 2 2001-07-13 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A 3 2001-07-13 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A 4 2001-07-13 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or o.


SM12J48 USM12J48 SM12G48A


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