W8NC90Z

STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STW8NC90Z 900 V < 1.38 Ω 7.6 A s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor IGS Gate-source Current (*) VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ()Pulse width limited by safe operating area (1)ISD ≤7.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed July 2000 Value 900 900 ±25 7.6 4.8 30 190 1.51 ±50 4 3 –65 to 150...