IRF1018ESPbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: G max. 8.4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Gate D D DS G D2Pak IRF1018ESPbF DS G TO-262 IRF1018ESLPbF D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw k Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC RθCS RθJA RθJA www.irf.com Junction-to-Case j Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 j Junction-to-Ambient (PCB Mount) , D2Pak ij Max. 79 56 315 110 0.76 ± 20 21 -55 to + 175 300 10lbxin (1.1Nxm) 88 47 11 Typ. ––– 0.50 ––– ––– Max. 1.32 ––– 62...