C4046

2SC4046 Silicon NPN Epitaxial Application High voltage amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC PC * 1 Tj Tstg Ratings 120 120 5 0.2 8 150 –55 to +150 Unit V V V A W °C °C 2SC4046 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to base breakdown voltage V(BR)CBO 120 — Collector to emitter breakdown V(BR)CEO voltage 120 — Emitter to base breakdown voltage V(BR)EBO 5 — Collector cutoff current ICBO — — DC current transfer ratio hFE*1 250 — Base to emitter voltage VBE — — Collector to emitter saturation VCE(sat) voltage — — Gain bandwidth product fT — 350 Collector output capacitance Cob — 3.5 Note: 1. The 2SC4046 is grouped by hFE as follows. Max Unit Test conditions —V IC = 10 µA, IE = 0 —V IC = 1 mA, RBE = ∞ —V IE = 10 µA, IC = 0 10 µA 800 1.0 V 1.0 V VCB = 80 V, IE = 0 VCE = 5 V, IC = 10 mA IC = 200 mA, IB = 20 mA — MHz VCE = 10 V, IC = 50 mA — pF VCB = 30 V, f = 1 MHz, IE = 0 Grade hFE DE 250 to 500 400 to 800 Collector power dissipation Pc (W) Collector Current IC (A) Maximum Collector Dissipation Curve 12 10 8 6 4 2 0 50 100 150 Case Temperature TC (°C) Area of Safe Operation 1.0 Single Pulse Ta = 25°C (25 V, 0.4 A) ...