BAT54SWT1G, NSVBAT54SWT1G
Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed...
BAT54SWT1G, NSVBAT54SWT1G
Dual Series
Schottky Barrier Diodes
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features
Extremely Fast Switching Speed Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage Forward Power Dissipation
@ TA = 25C Derate above 25C
VR 30
V
PF 200 mW 1.6 mW/C
Forward Current (DC) Non−Repetitive Peak Forward Current
tp < 10 msec Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IF IFSM
IFRM
200 Max 600 300
mA mA
mA
Junction Temperature
TJ −55 to 125 C
Storage Temperature Range
Tstg − 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 VOLT DUAL SERIES
SCHOTTKY
BARRIER DIODES
SOT−323 CASE 419 STYLE 9
1 ANODE
...