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NSVBAT54SWT1G Data Sheet

Dual Series Schottky Barrier Diodes

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NSVBAT54SWT1G
BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C VR 30 V PF 200 mW 1.6 mW/C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IF IFSM IFR.
NSVBAT54SWT1G

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BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C VR 30 V PF 200 mW 1.6 mW/C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IF IFSM IFRM 200 Max 600 300 mA mA mA Junction Temperature TJ −55 to 125 C Storage Temperature Range Tstg − 55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES SOT−323 CASE 419 STYLE 9 1 ANODE .


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