Transistor
2SD1304
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q Zener diode built in. ...
Transistor
2SD1304
Silicon
NPN epitaxial planer type
For low-frequency amplification
s Features
q Zener diode built in. q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 20±3 20±3 7 200 100 200 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1.45
1 3
2
+0.1
0.4 –0.05
+0.2
2.9 –0.05 1.9±0.2 0.95 0.95
+0.1
0.16 –0.06
+0.2
1.1 –0.1 0.8
0 to 0.1
0.1 to 0.3 0.4±0.2
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : 2A
Internal Connection
C
B
s Electrical Characteristics (Ta=25˚C)
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Transition frequency
Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) fT
Conditions VCB = 10V, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz
min
17 7 160 90
E
typ max Unit 0.1 µA 23 V V 460
0.5 V 150 MHz
*hFE1 Rank classification
Rank
Q
hFE1 Marking Symbol
160 ~ 260 2AQ
R 210 ~ 340
2A...
