FGPF30N45T

FGPF30N45T 450V, 30A PDP Trench IGBT FGPF30N45T 450V, 30A PDP Trench IGBT Features High Current Capability Low saturation voltage: VCE(sat) =1.55V @ IC = 30A High input impedance Fast switching Applications PDP System April 2009 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C TO-220F 1 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol VCES VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient G E Ratings 450 ±30 120 50.4 20.1 -55 to +150 -55 to +150 300 Typ. - Max. 2.48 62.5 Units V V A W W oC oC oC Units oC/W oC/W ©2009 Fairchild Semiconductor Corporation FGPF30N45T Rev. A 1 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Package Marking and Ordering Information Device Marking Device FGPF30N45T FGPF30N45TTU Package TO-220F Eco Status RoHS Packaging Type Rail / T...