Document
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum ratings
Dim ensional Package outline Active area (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3
l Gas analyzer l Water content analyzer l NIR (Near Infrared) photometry
Type No.
Cooling
Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C)
G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23
➀ ➁ ➂
TO-18 TO-5 TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage TE-cooled Two-stage TE-cooled
1.5 0.2 1.0
2 -40 to +70 -55 to +85
➃
TO-8
s Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent Spectral Peak Photo condition response sensitivity sensitivity Element range w avelen gth S Tem perature λ λp λ=λp T (°C) G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 25 (µm) 0.9 to 2.1 (µm) (A/W) Dark current ID VR=1 V Typ. Max. (nA) (nA) 55 550 125 1250 500 5000 5 (µA) 50 (µA) 5.5 55 50 500 500 5000 3 30 25 250 250 2500 Cut-off freq uenc y fc VR=1 V RL=50 Ω (MHz) 100 80 40 3 100 40 3 100 40 3 Terminal Shunt capacitance resistance Ct Rsh VR=1 V V R = 10 m V f=1 MHz (pF) 8 20 80 800 8 80 800 8 80 800 (MΩ) 0.9 0.3 0.1 0.01 9 1 0.1 18 2 0.2 D∗ λ=λp NEP λ=λp
Type No.
-10
0.9 to 2.07
1.95
1.2
-20
0.9 to 2.05
(cm ·H z 1/2 /W ) (W/Hz1/2) 1.5 × 10-13 2.5 × 10-13 2.5 × 1011 4 × 10-13 1.5 × 10-12 5 × 10-14 11 8 × 10 1 × 10-13 4 × 10-13 3 × 10-14 12 1.2 × 10 8 × 10-14 3 × 10-13
1
InGaAs PIN photodiode
s Spectral response
(Typ.) 1.4 1.2 T=25 ˚C
G8422/G8372/G5852 series
s Photo sensitivity temperature characteristic
(Typ.) 2
1.0 0.8
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1
0.6 0.4 0.2 T= -10 ˚C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
T= -20 ˚C
-1 0.8
1
1.2
1.4
1.6
1.8
2
2.2 2.4
2.6
WAVELENGTH (µm)
KIRDB0226EA
WAVELENGTH (µm)
KIRDB0207EA
s Dark current vs. reverse voltage Non-cooled type
100 µA (Typ. Ta=25 ˚C)
1 µA
TE-cooled type
(Typ.)
10 µA
G8372-03
100 nA
G5852-13 (T= -10 ˚C) G5852-23 (T= -20 ˚C)
DARK CURRENT
DARK CURRENT
1 µA
G8372-01
10 nA
G5852-11 (T= -10 ˚C) G5852-21 (T= -20 ˚C)
G8422-05 100 nA G8422-03 10 pA 0.01
G5852-103 (T= -10 ˚C) 1 nA G5852-203 (T= -20 ˚C)
0.1
1
10
100 pA 0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0235EA
REVERSE VOLTAGE (V)
KIRDB0228EA
s Terminal capacitance vs. reverse voltage
10 nF (Typ. Ta=25 ˚C, f=1 MHz) G8372-03 G5852-13/-23
s Shunt resistance vs. element temperature
10 MΩ (Typ. VR=10 mV) G8422-03 G5852-103/-203 G8422-05 100 kΩ G8372-01 G5852-11/-21
TERMINAL CAPACITANCE
1 MΩ
G8372-01 G5852-11/-21 100 pF
SHUNT RESISTANCE
1 nF
10 kΩ G8372-03 G5852-13/-23 1 kΩ
10 pF
G8422-05 G8422-03 G5852-103/-203
1 pF 0.01
0.1
1
10
100 Ω -40
-20
0
20
40
60
80
90
100
REVERSE VOLTAGE (V)
KIRDB0236EA
ELEMENT TEMPERATURE (˚C)
KIRDB0237EA
2
InGaAs PIN photodiode
s Thermistor temperature characteristic
106 (Typ.)
G8422/G8372/G5852 series
s Cooling characteristics of TE-cooler
40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
ELEMENT TEMPERATURE (˚C)
20 ONE-STAGE TE-COOLED TYPE 0
RESISTANCE (Ω)
105
-20
104
-40
TWO-STAGE TE-COOLED TYPE
10
3
-60
-20 0 20
-40
0
0.4
0.8
1.2
1.6
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
CURRENT (A)
KIRDB0231EA
s Current vs. voltage characteristics of TE-cooler
1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
CURRENT (A)
1.0 0.8 0.6 0.4 0.2 0 TWO-STAGE TE-COOLED TYPE
0
0.5
1.0
1.5
VOLTAGE (V)
KIRDB0115EA
3
InGaAs PIN photodiode
s Dimensional outline (unit: mm) ➀ G8422-03/-05, G8372-01
5.4 ± 0.2 4.7 ± 0.1 WINDOW 3.0 ± 0.1
G8422/G8372/G5852 series
➁ G8372-03
9.2 ± 0.2
0.15 MAX.
3.6 ± 0.2
2.5 ± 0.2 0.4 MAX.
2.7 ± 0.2
13 MIN.
0.45 LEAD 2.5 ± 0.2
0.45 LEAD 5.1 ± 0.3
1.5 MAX.
CASE
CASE
KIRDA0150EA
18 MIN.
PHOTOSENSITIVE SURFACE
PHOTOSENSITIVE SURFACE
4.2 ± 0.2
8.1 ± 0.1 WINDOW 5.9 ± 0.1
KIRDA0151EA
➂ G5852-103/-11/-13
15.3 ± 0.2 14 ± 0.2
6.4 ± 0.2
➃ G5852-203/-21/-23
15.3 ± 0.2 14 ± 0.2 10 ± 0.2 6.7 ± 0.2 10.2 ± 0.2 DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 12 MIN. DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2
KIRDA0029EB KIRDA0031EB
WINDOW 10 ± 0.2
WINDOW 10 ± 0.2
4.4 ± 0.2
12 MIN.
PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2
5.1 ± 0.2
PHOTOSENSITIVE SURFACE 0.45 LEAD
5.1 ± 0.2
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent r.