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G5852-23 Dataheets PDF



Part Number G5852-23
Manufacturers Hamamatsu Corporation
Logo Hamamatsu Corporation
Description InGaAs PIN photodiode
Datasheet G5852-23 DatasheetG5852-23 Datasheet (PDF)

PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maximum ratings Dim ensional Package outline Active area (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3 l Gas analyzer l Water content analyzer l NIR (Near Infrared) photometry Type No. Cooling Absolute maximum rat.

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PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maximum ratings Dim ensional Package outline Active area (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3 l Gas analyzer l Water content analyzer l NIR (Near Infrared) photometry Type No. Cooling Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C) G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 ➀ ➁ ➂ TO-18 TO-5 TO-8 Non-cooled - - -40 to +85 -55 to +125 One-stage TE-cooled Two-stage TE-cooled 1.5 0.2 1.0 2 -40 to +70 -55 to +85 ➃ TO-8 s Electrical and optical characteristics (Typ. unless otherwise noted) M easurem ent Spectral Peak Photo condition response sensitivity sensitivity Element range w avelen gth S Tem perature λ λp λ=λp T (°C) G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 25 (µm) 0.9 to 2.1 (µm) (A/W) Dark current ID VR=1 V Typ. Max. (nA) (nA) 55 550 125 1250 500 5000 5 (µA) 50 (µA) 5.5 55 50 500 500 5000 3 30 25 250 250 2500 Cut-off freq uenc y fc VR=1 V RL=50 Ω (MHz) 100 80 40 3 100 40 3 100 40 3 Terminal Shunt capacitance resistance Ct Rsh VR=1 V V R = 10 m V f=1 MHz (pF) 8 20 80 800 8 80 800 8 80 800 (MΩ) 0.9 0.3 0.1 0.01 9 1 0.1 18 2 0.2 D∗ λ=λp NEP λ=λp Type No. -10 0.9 to 2.07 1.95 1.2 -20 0.9 to 2.05 (cm ·H z 1/2 /W ) (W/Hz1/2) 1.5 × 10-13 2.5 × 10-13 2.5 × 1011 4 × 10-13 1.5 × 10-12 5 × 10-14 11 8 × 10 1 × 10-13 4 × 10-13 3 × 10-14 12 1.2 × 10 8 × 10-14 3 × 10-13 1 InGaAs PIN photodiode s Spectral response (Typ.) 1.4 1.2 T=25 ˚C G8422/G8372/G5852 series s Photo sensitivity temperature characteristic (Typ.) 2 1.0 0.8 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 0.6 0.4 0.2 T= -10 ˚C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 T= -20 ˚C -1 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 WAVELENGTH (µm) KIRDB0226EA WAVELENGTH (µm) KIRDB0207EA s Dark current vs. reverse voltage Non-cooled type 100 µA (Typ. Ta=25 ˚C) 1 µA TE-cooled type (Typ.) 10 µA G8372-03 100 nA G5852-13 (T= -10 ˚C) G5852-23 (T= -20 ˚C) DARK CURRENT DARK CURRENT 1 µA G8372-01 10 nA G5852-11 (T= -10 ˚C) G5852-21 (T= -20 ˚C) G8422-05 100 nA G8422-03 10 pA 0.01 G5852-103 (T= -10 ˚C) 1 nA G5852-203 (T= -20 ˚C) 0.1 1 10 100 pA 0.01 0.1 1 10 REVERSE VOLTAGE (V) KIRDB0235EA REVERSE VOLTAGE (V) KIRDB0228EA s Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 ˚C, f=1 MHz) G8372-03 G5852-13/-23 s Shunt resistance vs. element temperature 10 MΩ (Typ. VR=10 mV) G8422-03 G5852-103/-203 G8422-05 100 kΩ G8372-01 G5852-11/-21 TERMINAL CAPACITANCE 1 MΩ G8372-01 G5852-11/-21 100 pF SHUNT RESISTANCE 1 nF 10 kΩ G8372-03 G5852-13/-23 1 kΩ 10 pF G8422-05 G8422-03 G5852-103/-203 1 pF 0.01 0.1 1 10 100 Ω -40 -20 0 20 40 60 80 90 100 REVERSE VOLTAGE (V) KIRDB0236EA ELEMENT TEMPERATURE (˚C) KIRDB0237EA 2 InGaAs PIN photodiode s Thermistor temperature characteristic 106 (Typ.) G8422/G8372/G5852 series s Cooling characteristics of TE-cooler 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) ELEMENT TEMPERATURE (˚C) 20 ONE-STAGE TE-COOLED TYPE 0 RESISTANCE (Ω) 105 -20 104 -40 TWO-STAGE TE-COOLED TYPE 10 3 -60 -20 0 20 -40 0 0.4 0.8 1.2 1.6 ELEMENT TEMPERATURE (˚C) KIRDB0116EA CURRENT (A) KIRDB0231EA s Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 TWO-STAGE TE-COOLED TYPE 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode s Dimensional outline (unit: mm) ➀ G8422-03/-05, G8372-01 5.4 ± 0.2 4.7 ± 0.1 WINDOW 3.0 ± 0.1 G8422/G8372/G5852 series ➁ G8372-03 9.2 ± 0.2 0.15 MAX. 3.6 ± 0.2 2.5 ± 0.2 0.4 MAX. 2.7 ± 0.2 13 MIN. 0.45 LEAD 2.5 ± 0.2 0.45 LEAD 5.1 ± 0.3 1.5 MAX. CASE CASE KIRDA0150EA 18 MIN. PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 4.2 ± 0.2 8.1 ± 0.1 WINDOW 5.9 ± 0.1 KIRDA0151EA ➂ G5852-103/-11/-13 15.3 ± 0.2 14 ± 0.2 6.4 ± 0.2 ➃ G5852-203/-21/-23 15.3 ± 0.2 14 ± 0.2 10 ± 0.2 6.7 ± 0.2 10.2 ± 0.2 DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 12 MIN. DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 KIRDA0029EB KIRDA0031EB WINDOW 10 ± 0.2 WINDOW 10 ± 0.2 4.4 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 ± 0.2 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent r.


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