LUP12N65

LUP12N65 / LUF12N65 650V N-Channel Enhancement Mode MOSFET Product General Description These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy. These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology. Features 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A Low On-state Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Marking and Order Information TYPE LUP12N65 LUF12N65 MARKING P12N65 F12N65 PACKAGE TO-220 TO-220F PACKING 50PCS/TUBE 50PCS/TUBE Absolute Maximum Ratings and Thermal Characteristics (TC=25OC unless otherwise noted ) Parameter Symbol ULP12N65 ULF12N65 Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS +30 V Continuous Drain Current ID 12 12 A Pulsed Drain Current 1) Avalanche Energy with Single Pulse IAS=12A, VDD=90V, L=12mΗ Maximum Power Dissipation Derating Factor Operating Junction and Storage Te mp e ra ture Ra ng e Tc= 2 5 OC IDM E AS PD TJ,TSTG 48 48 990 175 52 1.4 0.42 -55 to +150 A mJ W OC Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package RθJC 0.7 RθJA 62.5 2.4 OC/W 100 OC/W IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.A July 2010 Page.1 LUP12N65 / LUF12N65 650V N-Channel Enhancement Mode MOSFET Parameter S...