LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Product General Description
These enhancement mode power fil...
LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Product General Description
These enhancement mode power filed effect
transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy. These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology.
Features
12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
Low On-state Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
Marking and Order Information
TYPE LUP12N65 LUF12N65
MARKING P12N65 F12N65
PACKAGE TO-220 TO-220F
PACKING 50PCS/TUBE 50PCS/TUBE
Absolute Maximum Ratings and Thermal Characteristics (TC=25OC unless otherwise noted )
Parameter
Symbol ULP12N65 ULF12N65 Units
Drain-Source Voltage
VDS 650 V
Gate-Source Voltage
VGS +30 V
Continuous Drain Current
ID 12 12 A
Pulsed Drain Current 1)
Avalanche Energy with Single Pulse
IAS=12A, VDD=90V, L=12mΗ
Maximum Power Dissipation Derating Factor
Operating Junction and Storage Te mp e ra ture Ra ng e
Tc= 2 5 OC
IDM E AS PD
TJ,TSTG
48 48
990 175 52 1.4 0.42
-55 to +150
A mJ W OC
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
RθJC
0.7
RθJA 62.5
2.4 OC/W 100 OC/W
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.A July 2010
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LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Parameter
S...