Document
StrongIRFETTM IRFP7430PbF
Applications
l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
l Fully Characterized Capacitance and Avalanche SOA
l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free*
D G
S
G Gate
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.0mΩ 1.3mΩ
c404A
195A
D
S D G
TO-247AC IRFP7430PbF
D Drain
S Source
Ordering Information
Base Part Number IRFP7430PbF
Package Type TO-247
Standard Pack Form
Tube
Quantity 50
Complete Part Number IRFP7430PbF
RDS(on), Drain-to -Source On Resistance (m Ω) ID, Drain Current (A)
6.0 ID = 100A
4.0
TJ = 125°C 2.0
TJ = 25°C 0.0
4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier
500 Limited By Package
400
300
200
100
0 25 50 75 100 125 150 175 TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 19, 2015
IRFP7430PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS TJ TSTG
Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
eSingle Pulse Avalanche Energy
EAS (Thermally limited)
lSingle Pulse Avalanche Energy
ÃdIAR Avalanche Current
dEAR Repetitive Avalanche Energy
Thermal Resistance
RθJC RθCS RθJA
Symbol
kJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
ÃjJunction-to-Ambient
Max.
404 286
195 1524 366 2.4 ± 20 -55 to + 175
300
x x10lbf in (1.1N m)
722 1405 See Fig. 14, 15, 22a, 22b
Typ. ––– 0.24 –––
Max. 0.41
––– 40
Units
A
W W/°C
V °C
mJ A mJ Units °C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Min. Typ. Max. 40 ––– ––– ––– 0.014 ––– ––– 1.0 1.3
1.2 ––– 2.2 ––– 3.9 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 2.1 –––
Units V
V/°C mΩ mΩ V μA
nA
Ω
Conditions VGS = 0V, ID = 250μA
dReference to 25°C, ID = 1.0mA gVGS = 10V, ID = 100A gVGS = 6.0V, ID = 50A
VDS = VGS, ID = 250μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
Notes: Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction
temperature. Limited by TJmax, starting TJ = 25°C, L = 0.14mH
RG = 50Ω, IAS = 100A, VGS =10V. ISD ≤ 100A, di/dt ≤ 990A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 53A,
VGS =10V. * Halogen -Free since April 30, 2014
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015
IRFP7430PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs Forward Transconductance
150 ––– –––
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Total Gate Charge
––– 300 460
Gate-to-Source Charge
––– 77 –––
Gate-to-Drain ("Miller") Charge
––– 98 –––
Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time
––– 202 ––– ––– 32 –––
Rise Time
––– 105 –––
Turn-Off Delay Time
––– 160 –––
Fall Time
––– 100 –––
Input Capacitance
––– 14240 –––
Output Capacitance
––– 2130 –––
Reverse Transfer Capacitance
iÃEffective Output Capacitance (Energy Related) hEffective Output Capacitance (Time Related)
––– ––– –––
1460 2605 2920
––– ––– –––
Diode C.