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IRFP7430PBF Dataheets PDF



Part Number IRFP7430PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFP7430PBF DatasheetIRFP7430PBF Datasheet (PDF)

StrongIRFETTM IRFP7430PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead.

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StrongIRFETTM IRFP7430PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free* D G S G Gate HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.0mΩ 1.3mΩ c404A 195A D S D G TO-247AC IRFP7430PbF D Drain S Source Ordering Information Base Part Number IRFP7430PbF Package Type TO-247 Standard Pack Form Tube Quantity 50 Complete Part Number IRFP7430PbF RDS(on), Drain-to -Source On Resistance (m Ω) ID, Drain Current (A) 6.0 ID = 100A 4.0 TJ = 125°C 2.0 TJ = 25°C 0.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 500 Limited By Package 400 300 200 100 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback February 19, 2015 IRFP7430PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) eSingle Pulse Avalanche Energy EAS (Thermally limited) lSingle Pulse Avalanche Energy ÃdIAR Avalanche Current dEAR Repetitive Avalanche Energy Thermal Resistance RθJC RθCS RθJA Symbol kJunction-to-Case Parameter Case-to-Sink, Flat Greased Surface ÃjJunction-to-Ambient Max. 404™ 286™ 195 1524 366 2.4 ± 20 -55 to + 175 300 x x10lbf in (1.1N m) 722 1405 See Fig. 14, 15, 22a, 22b Typ. ––– 0.24 ––– Max. 0.41 ––– 40 Units A W W/°C V °C mJ A mJ Units °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Internal Gate Resistance Min. Typ. Max. 40 ––– ––– ––– 0.014 ––– ––– 1.0 1.3 1.2 ––– 2.2 ––– 3.9 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 2.1 ––– Units V V/°C mΩ mΩ V μA nA Ω Conditions VGS = 0V, ID = 250μA dReference to 25°C, ID = 1.0mA gVGS = 10V, ID = 100A gVGS = 6.0V, ID = 50A VDS = VGS, ID = 250μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.14mH RG = 50Ω, IAS = 100A, VGS =10V. „ ISD ≤ 100A, di/dt ≤ 990A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400μs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ approximately 90°C. Š Limited by TJmax, starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 53A, VGS =10V. * Halogen -Free since April 30, 2014 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 IRFP7430PbF Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. gfs Forward Transconductance 150 ––– ––– Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge ––– 300 460 Gate-to-Source Charge ––– 77 ––– Gate-to-Drain ("Miller") Charge ––– 98 ––– Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time ––– 202 ––– ––– 32 ––– Rise Time ––– 105 ––– Turn-Off Delay Time ––– 160 ––– Fall Time ––– 100 ––– Input Capacitance ––– 14240 ––– Output Capacitance ––– 2130 ––– Reverse Transfer Capacitance iÃEffective Output Capacitance (Energy Related) hEffective Output Capacitance (Time Related) ––– ––– ––– 1460 2605 2920 ––– ––– ––– Diode C.


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