BFQ65
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna ampli...
BFQ65
Silicon
NPN Planar RF
Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Electrostatic sensitive device. Observe precautions for handling.
Features
D High power gain D Low noise figures D High transition frequence
3
2
94 9308
1
Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu
TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96
Symbol
VCBO VCEO VEBO
IC Ptot Tj Tstg
Value 20 10 2.5 50 300 150
–65 to +150
Unit V V V mA mW °C °C
Symbol RthJA
Maximum 300
Unit K/W
1 (5)
BFQ65
Electrical DC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Collector-emitter cut-off current VCE = 20 V, VBE = C
Collector-base cut-off current VCB = 15 V, IE = 0
Emitter-base cut-off current VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA
DC forward current transfer ratio IC = 15 mA, VCE = 5 V
Symbol Min. Typ. Max. Unit
ICES 100 mA
ICBO IEBO
100 nA 1 mA
V(BR)CEO
10
V
VCEsat
0.1 0.4
V
hFE 60 100 150
Electrical AC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Symbol Min. Ty...